Modified Electron Beam Induced Deposition of Metal Nanostructure Arrays using a Parallel Electron Beam

摘要

A modified electron beam induced deposition method using a parallel beam ofelectrons is developed. The method relies on the build-up of surface potentialon an insulating surface exposed to an electron beam. Presence of sharp edgeson the insulating surface implies presence of large electric fields that leadto site-specific nucleation of metal vapor on those regions. Feature sizes assmall as 20 nm can be deposited without the need to use fine probes and thusthe limitation of probe size imposed on the resolution is overcome. The use ofpure metal vapor also renders the process inherently clean.